12th Int'l Symposium on Quality Electronic Design
نویسندگان
چکیده
Three-dimensional integration has the potential to increase integration density and to reduce communication latency of chip-multiprocessors (CMPs). However, high power density (i.e., power dissipation per unit volume) due to the high integration incurs temperature-related problems in reliability, power consumption, performance, and system cooling cost. In this paper, we propose a design-time solution for temperature-constrained multi-core systems with 3D stacked cache memory in order to maximize the instruction throughput. The proposed method combines power gating of memory banks in the 3D stacked cache memory, which adapts cache partitioning [7], and dynamic voltage and frequency scaling (DVFS) of each core in a temperatureaware manner. Experimental results show that the proposed method offers up to 32% (average 15%) performance improvement in terms of instructions per second (IPS) compared with an existing method which only performs cache partitioning without temperature consideration.
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12th Int'l Symposium on Quality Electronic Design
This paper presents a new model for the statistical analysis of the impact of Random Telegraph Noise (RTN) on circuit delay. This RTN-aware delay model have been developed using Pseudo RTN based on a Markov process with RTN statistical property. We have also measured RTNinduced delay fluctuation using a circuit matrix array fabricated in a 65nm process. Measured results include frequency fluctu...
متن کامل12th Int'l Symposium on Quality Electronic Design
As process technology continues to shrink, interconnect current densities continue to increase, making it ever more difficult to meet chip reliability targets. For microprocessors in the latest 32nm processes, interconnect wear-out via electromigration is as critical a design parameter, if not more so, as timing, power, and area, and must be planned for from the outset. This paper presents a tr...
متن کامل12th Int'l Symposium on Quality Electronic Design
It is widely-known that coupling exists between adjacent through-silicon vias (TSVs) in 3D ICs. Since this TSVto-TSV coupling is not negligible, it is highly likely that TSVto-TSV coupling affects crosstalk significantly. Although a few works have already analyzed coupling in 3D ICs, they used Sparameter-based methods under the assumption that all ports in their simulation structures are under ...
متن کامل12th Int'l Symposium on Quality Electronic Design
In this paper we review some of the state of the art techniques for parasitic interconnect extraction in the presence of random geometrical variations due to uncertainties in the manufacturing processes. We summarize some of the most recent development in both sampling based (non-intrusive) and expansion based (intrusive) algorithms for the extraction of both general impedance and capacitance i...
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Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, and Mansun Chan 1 The Micro& Nano Electronic Device and Integrated Technology Group, The Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen, P. R .China; 2 TSRC, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, Institute of Microelectronics, EECS, Peki...
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